Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

被引：1
|
作者：
Liu, Chih-Yi [1 ]
Weng, Min-Hang [2 ]
Lin, Jyun-Min [1 ]
机构：
[1] Natl Kaohsiung Univ Appl Sci, Dept Elect Engn, Kaohsiung 807, Taiwan
[2] Met Ind Res & Dev Ctr, Kaohsiung 821, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2011年 / 21卷 / 07期
关键词：
Coplanar waveguide (CPW); microwave loss; surface passivation; thermal processing stability; thermally-induced electrical instability; SRTIO3;
D O I：
10.1109/LMWC.2011.2151850
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.
引用
收藏
页码：365 / 367
页数：3
相关论文
共 50 条
  • [21] RAPID THERMAL-PROCESSING OF HIGH-QUALITY SILICON DIOXIDE FILMS
    NULMAN, J
    [J]. SOLID STATE TECHNOLOGY, 1986, 29 (04) : 189 - 191
  • [22] Rapid thermal processing of high-performance dielectrics and silicon solar cells
    Rohatgi, A
    [J]. ADVANCES IN RAPID THERMAL PROCESSING, 1999, 99 (10): : 265 - 276
  • [23] Improving Ag Thick Film Contacts and Al Back Surface Field Quality of PERC Silicon Solar Cells by High Speed Rapid Thermal Processing
    Unsur, V
    Ebong, A.
    [J]. 2020 IEEE 17TH INTERNATIONAL CONFERENCE ON SMART COMMUNITIES: IMPROVING QUALITY OF LIFE USING ICT, IOT AND AI (IEEEHONET 2020), 2020, : 143 - 147
  • [24] RAPID THERMAL ANNEALING OF HIGH-CONCENTRATION, ARSENIC IMPLANTED SILICON SINGLE-CRYSTALS
    LARSEN, AN
    SHIRYAEV, SY
    SORENSEN, ES
    TIDEMANDPETERSSON, P
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (26) : 1805 - 1807
  • [25] Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment
    Pilipenko, U. A.
    Sergeichik, A. A.
    Shestovski, D. V.
    Solodukha, V. A.
    [J]. DEVICES AND METHODS OF MEASUREMENTS, 2024, 15 (02): : 142 - 150
  • [26] HIGH-EFFICIENCY SILICON SOLAR-CELLS BY RAPID THERMAL-PROCESSING
    ROHATGI, A
    CHEN, Z
    DOSHI, P
    PHAM, T
    RUBY, D
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (16) : 2087 - 2089
  • [27] RAPID THERMAL ANNEALING OF HIGH-CONCENTRATION MIXED AS/IN-IMPLANTED AND P/IN-IMPLANTED SILICON SINGLE-CRYSTALS
    SHIRYAEV, SY
    LARSEN, AN
    SAFRONOV, N
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 3953 - 3956
  • [28] TRANSIENT RAPID THERMAL ANNEALING OF LOW-DOSE HIGH-ENERGY PHOSPHORUS IMPLANTED SILICON
    BARSONY, I
    HEIDEMAN, JL
    KLAPPE, J
    MIDDELHOEK, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (02): : 418 - 422
  • [29] SPECTROSCOPIC INVESTIGATION OF ARSENIC-INDUCED SURFACE-DEFECTS IN HIGH-DOSE AS+ IMPLANTED RAPID THERMAL ANNEALED SILICON
    KUMAR, SN
    CHAUSSEMY, G
    ROURA, P
    LAUGIER, A
    [J]. CHARACTERIZATION OF THE STRUCTURE AND CHEMISTRY OF DEFECTS IN MATERIALS, 1989, 138 : 215 - 220
  • [30] Two-side surface photovoltage studies for implanted iron diffusion in silicon during rapid thermal anneal
    Rapoport, I.
    Taylor, P.
    Kearns, J.
    Schroder, D. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)
12345