Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing

被引：0
|
作者：
Fattakhov, YV [1 ]
Galyautdinov, MF [1 ]
L'vova, TN [1 ]
Zakharov, MV [1 ]
Khaibullin, IB [1 ]
机构：
[1] Russian Acad Sci, Kazan Phys Tech Inst, Kazan 420029, Russia
来源：
MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷
关键词：
ion implantation; surface; semiconductors; defects; rapid thermal annealing; lasers; local melting; recrystallization;
D O I：
10.1117/12.557275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Investigation of the dynamics of recrystallization and anisotropic local melting of implanted silicon under irradiation by pulses of incoherent light with different duration and power densities has been carried out. Dynamics of recrystallization of implanted silicon surface has been investigated in situ using a diffraction method. The method is based on the registering of the diffraction signal from a special periodic structure with high time and spatial resolution. This periodic structure is formed using special regimes of implantation of phosphorus and silicon ions in monocrystalline silicon with different fluencies.
引用
收藏
页码：104 / 109
页数：6
相关论文
共 50 条
  • [1] Investigation of structural-phase transitions dynamics on the surface of implanted silicon at rapid thermal processing
    Fattakhov, Ya. V.
    Galyautdinov, M. F.
    L'vova, T. N.
    Zakharov, M. V.
    Khaibullin, I. B.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 222 - 226
  • [2] The dynamics of recrystallization and melting of implanted silicon at irradiation by powerful light pulses
    Fattakhov, YV
    Galyautdinov, MF
    L'vova, TN
    Khaibullin, IB
    [J]. VACUUM, 1998, 51 (02) : 255 - 259
  • [3] Dynamics of recrystallization and melting of implanted silicon at irradiation by powerful light pulses
    Fattakhov, Y
    Galyautdinov, M
    Lvova, T
    Khaibullin, I
    [J]. PROCESS, EQUIPMENT, AND MATERIALS CONTROL IN INTEGRATED CIRCUIT MANUFACTURING II, 1996, 2876 : 86 - 96
  • [4] ACTIVATION AND RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS-SILICON FILMS BY RAPID THERMAL ANNEALING
    KIM, YT
    YOO, HJ
    JUN, CH
    JANG, WI
    KIM, SH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 796 - 801
  • [5] Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon
    Liu, Chih-Yi
    Weng, Min-Hang
    Lin, Jyun-Min
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (07) : 365 - 367
  • [6] THERMAL MODELING OF ZONE-MELTING-RECRYSTALLIZATION PROCESSING OF SILICON-ON-INSULATOR FILM STRUCTURES
    MIAOULIS, IN
    WONG, PY
    LIPMAN, JD
    IM, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7273 - 7282
  • [7] Rapid thermal recrystallization of amorphous silicon films
    G. D. Beshkov
    D. B. Dimitrov
    V. Lazarova
    J. Koprinarova
    K. Gesheva
    E. Vlaev
    [J]. Journal of Materials Research, 1997, 12 : 2511 - 2514
  • [8] Rapid thermal recrystallization of amorphous silicon films
    Beshkov, GD
    Dimitrov, DB
    Lazarova, V
    Koprinarova, J
    Gesheva, K
    Vlaev, E
    [J]. JOURNAL OF MATERIALS RESEARCH, 1997, 12 (10) : 2511 - 2514
  • [9] RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING
    XU, TB
    ZHU, PR
    LI, DQ
    REN, TQ
    SUN, HL
    WAN, SK
    [J]. PHYSICS LETTERS A, 1994, 189 (05) : 423 - 427
  • [10] INVESTIGATION OF RAPID-THERMAL-PROCESSING-INDUCED DEFECTS IN ION-IMPLANTED CZOCHRALSKI SILICON BY THE MAGIC MIRROR METHOD
    HAHN, S
    KUGIMIYA, K
    YARLING, CB
    SUGA, H
    SMITH, WL
    BLAUSTEIN, PR
    TAKAHASHI, K
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) : A86 - A90
12345