Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing

被引：0
|
作者：
Fattakhov, YV [1 ]
Galyautdinov, MF [1 ]
L'vova, TN [1 ]
Zakharov, MV [1 ]
Khaibullin, IB [1 ]
机构：
[1] Russian Acad Sci, Kazan Phys Tech Inst, Kazan 420029, Russia
来源：
MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷
关键词：
ion implantation; surface; semiconductors; defects; rapid thermal annealing; lasers; local melting; recrystallization;
D O I：
10.1117/12.557275
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Investigation of the dynamics of recrystallization and anisotropic local melting of implanted silicon under irradiation by pulses of incoherent light with different duration and power densities has been carried out. Dynamics of recrystallization of implanted silicon surface has been investigated in situ using a diffraction method. The method is based on the registering of the diffraction signal from a special periodic structure with high time and spatial resolution. This periodic structure is formed using special regimes of implantation of phosphorus and silicon ions in monocrystalline silicon with different fluencies.
引用
收藏
页码：104 / 109
页数：6
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