THERMAL DEFECTS IN HIGH-RESISTIVITY DISLOCATION-FREE SILICON

被引：0
|
作者：
VORONKOV, VV
VORONKOVA, GI
GOLOVINA, VN
KLIMANOV, EA
FAMITSKII, VI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：572 / 574
页数：3
相关论文
共 50 条
  • [1] NATURE OF DEEP CENTERS FORMED AS A RESULT OF HIGH-TEMPERATURE TREATMENT OF HIGH-RESISTIVITY DISLOCATION-FREE SILICON
    BERMAN, LS
    VLASOV, SI
    KLIMANOV, EA
    FAMITSKII, VI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 233 - 234
  • [2] Mechanics of Defects in Dislocation-Free Silicon Single Crystals
    N. A. Verezub
    A.I. Prostomolotov
    [J]. Mechanics of Solids, 2023, 58 : 383 - 403
  • [3] Mechanics of Defects in Dislocation-Free Silicon Single Crystals
    Verezub, N. A.
    Prostomolotov, A. I.
    [J]. MECHANICS OF SOLIDS, 2023, 58 (02) : 383 - 403
  • [4] CHARACTERIZATION OF SWIRL DEFECTS IN DISLOCATION-FREE SILICON-CRYSTALS
    KOCK, AJRD
    PETROFF, P
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C81 - C81
  • [5] The aggregation of point defects in dislocation-free silicon single crystals
    Talanin, V., I
    Talanin, I. E.
    Voronin, A. A.
    Sirota, A., V
    [J]. FUNCTIONAL MATERIALS, 2007, 14 (01): : 48 - 52
  • [6] Hydrogen-related defects in high-resistivity silicon
    Soltanovich, OA
    Feklisova, OV
    Yakimov, EB
    [J]. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 150 - 154
  • [7] DEEP LEVELS OF THERMAL DEFECTS IN HIGH-RESISTIVITY ULTRAPURE N-TYPE SILICON
    VERBITSKAYA, EM
    EREMIN, VK
    IVANOV, AM
    STROKAN, NB
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (11): : 1101 - 1106
  • [8] THE INFLUENCE OF THERMAL POINT-DEFECTS ON THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON-CRYSTALS
    DEKOCK, AJR
    VANDEWIJGERT, WM
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 888 - 890
  • [9] On the recombination of intrinsic point defects in dislocation-free silicon single crystals
    V. I. Talanin
    I. E. Talanin
    [J]. Physics of the Solid State, 2007, 49 : 467 - 471
  • [10] Recombination of charge carriers through growth defects in dislocation-free silicon
    Kolkovskii, II
    Lugakov, PF
    [J]. INORGANIC MATERIALS, 1999, 35 (01) : 1 - 3
12345