Hydrogen-related defects in high-resistivity silicon

被引：1

作者：

Soltanovich, OA ^{[1
]}

Feklisova, OV ^{[1
]}

Yakimov, EB ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol, RU-142432 Chernogolovka, Moscow District, Russia

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷

关键词：

deep levels; hydrogen; Si; wet chemical etching;

D O I：

10.4028/www.scientific.net/SSP.82-84.150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two new deep level centers with activation energies E-C-0.18 eV and E-C- 0.50 eV have been found in a set of high resistivity silicon crystals after wet chemical etching. Depth distribution and annealing behaviour of the observed centers are analyzed. It is shown that at least one of these centers contains hydrogen.

引用

页码：150 / 154

页数：5

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