Reliability Study of the 90nm CMOS Inverter

被引：0
|
作者：
Hadi, Dayanasari Abdul [1 ]
Soin, Norhayati [1 ]
Hatta, S. F. Wan Muhamad [1 ]
机构：
[1] Univ Malaya, Fac Engn, Kuala Lumpur 50603, Malaysia
来源：
ENABLING SCIENCE AND NANOTECHNOLOGY | 2011年 / 1341卷
关键词：
Negative bias temperature instability (NBTI); threshold voltage; propagation delay; voltage transfer characteristic (VTC); BIAS TEMPERATURE INSTABILITY;
D O I：
10.1063/1.3586980
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effect of the negative bias temperature instability (NBTI) has been studied on the performance of the CMOS inverter using ELDO analog simulator. A simulation study had been conducted on a CMOS inverter using BSIM3V3 model and focused on the PMOS device of the inverter that was simulated with different elevated temperatures in 10 years' time. In this paper, the effects of the temperature variations on the NBTI are studied. The effect on the device parameters such as threshold voltage (V-th) and the circuit performance had been investigated and explained in detail. The simulation results show and increasing in term of term of threshold voltage and also the propagation delay for both before and after stress conditions. Beside, the voltage transfer characteristic (VTC) gives a significant shift when comparing before and after stress condition especially at higher temperature.
引用
收藏
页码：181 / 184
页数：4
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