90nm generation RF CMOS technology

被引：0

作者：

Stamper, Anthony ^{[1
]}

Bolam, Ronald ^{[1
]}

Coolbaugh, Douglas

Chanda, Kaushik

Collins, David ^{[1
]}

Dunn, James ^{[1
]}

He, Zhong-Xiang ^{[1
]}

Erturk, Mete ^{[1
]}

Eshun, Ebenezer

Lindgren, Peter ^{[1
]}

McDevitt, Thomas ^{[1
]}

Moon, Matthew ^{[1
]}

Porth, Bruce ^{[1
]}

Rathore, Hazara

Onge, Stephen St. ^{[1
]}

Snavely, Colleen

Tiersch, Matthew ^{[1
]}

Winslow, Arthur ^{[1
]}

Zwonik, Robert ^{[1
]}

机构：

[1] IBM Corp, Essex Jct, VT 05452 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper discusses the BEOL development, qualification, and manufacturing ramp of IBM's 90nm generation RF-CMOS technology. This technology, which was qualified in both 200mm and 300mm fabs, was developed using IBM's base 90nm generation and includes all standard RF analog features and RF circuit models [3]. BEOL RF analog features include analog wiring, which consists of 3um Cu and/or 4um AlCu wires, 2fF/mu m(2) Si3N4 (nitride) and 5.61F/mu m(2) High-K metal-insulator-metal (MIM) capacitors, 0.3-1.6fF/mu m(2) vertical-natural capacitors formed with native Cu wires and vias, FEOL polysilicon and crystalline silicon resistors, and precision 8% tolerance BEOL TaN resistors. As compared to IBM's 130nm generation RF-CMOS, the key changes include three BEOL capacitor options, dual damascene and tapered via analog wiring, and low-K SiCOH intermetal dielectric (IMD).

引用

页码：363 / 369

页数：7

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