90nm RF CMOS technology for low-power 900MHz applications

被引：0

作者：

Ramos, J ^{[1
]}

Mercha, A ^{[1
]}

Jeamsaksiri, W ^{[1
]}

Linten, D ^{[1
]}

Jenei, S ^{[1
]}

Rooyackers, R ^{[1
]}

Verbeeck, R ^{[1
]}

Thijs, S ^{[1
]}

Scholten, AJ ^{[1
]}

Wambacq, P ^{[1
]}

Debusschere, I ^{[1
]}

Decoutere, S ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work emphasizes the low power capabilities of a 90nm RF CMOS technology and a poryblio of high Q passive components for low-power portable applications around 900 MHz.. The experimental results mainly focus on the trade-off needed to account for an optimal operation in weak inversion for low-power applications. The DC gain, the bandwidth and the distortion are discussed to evaluate the possibility offered by the CMOS technology scaling. The achievements are illustrated for the first time by the good performances of a fully integrated low-noise amplifier operating in moderate inversion at 900MHz.

引用

页码：329 / 332

页数：4

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