GaN/InGaN Heterojunction Bipolar Transistors With fT > 5 GHz

被引：8

作者：

Shen, Shyh-Chiang ^{[1
]}

Dupuis, Russell D. ^{[1
]}

Lee, Yi-Che ^{[1
]}

Kim, Hee-Jin ^{[1
]}

Zhang, Yun ^{[1
]}

Lochner, Zachary ^{[1
]}

Yoder, P. Douglas ^{[1
]}

Ryou, Jae-Hyun ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 08期

基金：

美国国家科学基金会;

关键词：

GaN; heterojunction bipolar transistors (HBTs); radio frequency (RF); CURRENT GAIN; INGAN;

D O I：

10.1109/LED.2011.2156378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report GaN/InGaN n-p-n double-heterojunction bipolar transistors with the collector current density (J(C)) > 16 kA/cm(2) and the current gain (beta) > 24 grown on a sapphire substrate. The cutoff frequency (f(T)) of greater than 5 GHz and the maximum oscillation frequency (f(max)) of 1.3 GHz are also measured for a GaN/InGaN heterojunction bipolar transistor at J(C) = 4.7 kA/cm(2).

引用

页码：1065 / 1067

页数：3

共 50 条

[11] High current gains obtained by InGaN/GaN double heterojunction bipolar transistors
Makimoto, T
Kumakura, K
Kobayashi, N
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (01): : 183 - 186
[12] 35 GHZ FT AND 26 GHZ FMAX GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
PRASAD, SJ
HAYNES, C
VETANEN, B
PARK, S
BEERS, I
DAVITO, D
[J]. ELECTRONICS LETTERS, 1992, 28 (25) : 2341 - 2343
[13] Strained thick p-InGaN layers for GaN/InGaN heterojunction bipolar transistors on sapphire substrates
Makimoto, T
Yamauchi, Y
Kido, T
Kumakura, K
Taniyasu, Y
Kasu, M
Matsumoto, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2722 - 2725
[14] InP pseudormorphic heterojunction bipolar transistor (PHBT) with Ft >750GHz
Feng, M.
Snodgrass, Williams
[J]. 2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 399 - 402
[15] Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors
Chu-Kung, B. F.
Feng, M.
Walter, G.
Holonyak, N., Jr.
Chung, T.
Ryou, J. -H.
Limb, J.
Yoo, D.
Shen, S. -C.
Dupuis, R. D.
Keogh, D.
Asbeck, P. M.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (08)
[16] 75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS
PATTON, GL
COMFORT, JH
MEYERSON, BS
CRABBE, EF
SCILLA, GJ
DEFRESART, E
STORK, JMC
SUN, JYC
HARAME, DL
BURGHARTZ, JN
[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) : 171 - 173
[17] GaN/SiC heterojunction bipolar transistors
Schaff, WJ
Wu, H
Praharaj, CJ
Murphy, M
Eustis, T
Foutz, B
Ambacher, O
Eastman, LF
[J]. SOLID-STATE ELECTRONICS, 2000, 44 (02) : 259 - 264
[18] GaN/SiC heterojunction bipolar transistors
Torvik, JT
Pankove, JI
Van Zeghbroeck, B
[J]. SOLID-STATE ELECTRONICS, 2000, 44 (07) : 1229 - 1233
[19] High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2
Zhang, Yun
Lee, Yi-Che
Lochner, Zachary
Kim, Hee Jin
Choi, Suk
Ryou, Jae-Hyun
Dupuis, Russell D.
Shen, Shyh-Chiang
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2451 - 2453
[20] High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base
Makimoto, T
Kumakura, K
Kobayashi, N
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (03) : 380 - 381

← 1 2 3 4 5 →

GaN/InGaN Heterojunction Bipolar Transistors With fT &gt; 5 GHz

GaN/InGaN Heterojunction Bipolar Transistors With fT > 5 GHz