High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2

被引：3

作者：

Zhang, Yun ^{[1
]}

Lee, Yi-Che ^{[1
]}

Lochner, Zachary ^{[1
]}

Kim, Hee Jin ^{[1
]}

Choi, Suk ^{[1
]}

Ryou, Jae-Hyun ^{[1
]}

Dupuis, Russell D. ^{[1
]}

Shen, Shyh-Chiang ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch ECE, Atlanta, GA 30332 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

GaN/InGaN; heterojunction bipolar transistors; current gain; power density; HIGH-CURRENT GAIN; HIGH-VOLTAGE OPERATION; ALGAN/GAN HBTS; BASE-REGROWTH; P-INGAN; EMITTER; GROWTH;

D O I：

10.1002/pssc.201001098

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report GaN/In0.03Ga0.97N npn double heterojunction bipolar transistors (DHBTs) grown on sapphire substrates for high power applications. High current gain and high power density are obtained using a simple single-growth mesa etching process. A device with an emitter area (A(E)) of 20x20 mu m(2) achieves a peak d.c. current gain (beta) of 84, a maximum collector current density (J(C)) of 7.2 kA/cm(2) and a maximum power density > 240 kW/cm(2). A large-area (A(E) = 12163 mu m(2)) multi-finger device also shows a peak beta = 30, maximum collector current (I-c) = 200 mA and maximum d.c. power = 3.76 W. These values are among the best for the reported III-N HBTs to date. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2451 / 2453

页数：3

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High-performance GaN/InGaN double heterojunction bipolar transistors with power density &gt;240 kW/cm2

High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2