GaN/InGaN Heterojunction Bipolar Transistors With fT > 5 GHz

被引：8

作者：

Shen, Shyh-Chiang ^{[1
]}

Dupuis, Russell D. ^{[1
]}

Lee, Yi-Che ^{[1
]}

Kim, Hee-Jin ^{[1
]}

Zhang, Yun ^{[1
]}

Lochner, Zachary ^{[1
]}

Yoder, P. Douglas ^{[1
]}

Ryou, Jae-Hyun ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 08期

基金：

美国国家科学基金会;

关键词：

GaN; heterojunction bipolar transistors (HBTs); radio frequency (RF); CURRENT GAIN; INGAN;

D O I：

10.1109/LED.2011.2156378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report GaN/InGaN n-p-n double-heterojunction bipolar transistors with the collector current density (J(C)) > 16 kA/cm(2) and the current gain (beta) > 24 grown on a sapphire substrate. The cutoff frequency (f(T)) of greater than 5 GHz and the maximum oscillation frequency (f(max)) of 1.3 GHz are also measured for a GaN/InGaN heterojunction bipolar transistor at J(C) = 4.7 kA/cm(2).

引用

页码：1065 / 1067

页数：3

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GaN/InGaN Heterojunction Bipolar Transistors With fT &gt; 5 GHz

GaN/InGaN Heterojunction Bipolar Transistors With fT > 5 GHz