InP pseudormorphic heterojunction bipolar transistor (PHBT) with Ft >750GHz

被引：16
|
作者：
Feng, M. [1 ]
Snodgrass, Williams [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, 1406 W Green St, Urbana, IL 61801 USA
来源：
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
10.1109/ICIPRM.2007.381208
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：399 / 402
页数：4
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