75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：346
|
作者：
PATTON, GL
COMFORT, JH
MEYERSON, BS
CRABBE, EF
SCILLA, GJ
DEFRESART, E
STORK, JMC
SUN, JYC
HARAME, DL
BURGHARTZ, JN
机构：
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 04期
关键词：
D O I：
10.1109/55.61782
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (fT) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (Rbi) of 17 kΩ/∧, and an emitter width of 0.9 µm. This performance level, which represents almost a factor of 2 increase in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps. © 1990 IEEE
引用
收藏
页码：171 / 173
页数：3
相关论文
共 50 条
  • [1] SIGE-BASE, POLYEMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS
    PATTON, GL
    HARAME, DL
    STORK, JMC
    MEYERSON, BS
    SCILLA, GJ
    GANIN, E
    [J]. 1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 95 - 96
  • [2] BASE TRANSIT-TIME FOR SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS
    GAO, GB
    MORKOC, H
    [J]. ELECTRONICS LETTERS, 1991, 27 (16) : 1408 - 1410
  • [3] SIGE-BASE BIPOLAR-TRANSISTORS FOR CRYOGENIC BICMOS APPLICATIONS
    CRESSLER, JD
    [J]. MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 841 - 848
  • [4] COMPOSITION GRADING FOR BASE TRANSIT-TIME MINIMIZATION IN SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS
    WINTERTON, SS
    PETERS, CJ
    TARR, NG
    [J]. SOLID-STATE ELECTRONICS, 1993, 36 (08) : 1161 - 1164
  • [5] DOUBLE-DIFFUSED GRADED SIGE-BASE BIPOLAR-TRANSISTORS
    VOOK, D
    KAMINS, TI
    BURTON, G
    VANDEVOORDE, PJ
    WANG, HH
    COEN, R
    LIN, J
    PETTENGILL, DF
    YU, PK
    ROSNER, SJ
    TURNER, JE
    LADERMAN, SS
    FU, HS
    WANG, AS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) : 1013 - 1018
  • [6] THE BASE COLLECTOR HETEROJUNCTION EFFECT IN SIGE BASE BIPOLAR-TRANSISTORS
    UGAJIN, M
    AMEMIYA, Y
    [J]. SOLID-STATE ELECTRONICS, 1991, 34 (06) : 593 - 598
  • [7] SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
    STORK, JMC
    PATTON, GL
    HARAME, DL
    MEYERSON, BS
    IYER, SS
    GANIN, E
    CRABBE, EF
    [J]. 1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 1 - 4
  • [8] SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS - AN ANALYTICAL CURRENT GAIN AND FORWARD TRANSIT-TIME MODEL
    LU, TC
    CHEN, HP
    KUO, JB
    [J]. SOLID-STATE ELECTRONICS, 1993, 36 (09) : 1313 - 1320
  • [9] On the optimization of SiGe-base bipolar transistors
    Hueting, RJE
    Slotboom, JW
    Pruijmboom, A
    deBoer, WB
    Timmering, CE
    Cowern, NEB
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1518 - 1524
  • [10] HIGH-LOW POLYSILICON-EMITTER SIGE-BASE BIPOLAR-TRANSISTORS
    CRABBE, EF
    COMFORT, JH
    CRESSLER, JD
    SUN, JYC
    STORK, JMC
    [J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (10) : 478 - 480
12345