75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：347
|
作者：
PATTON, GL
COMFORT, JH
MEYERSON, BS
CRABBE, EF
SCILLA, GJ
DEFRESART, E
STORK, JMC
SUN, JYC
HARAME, DL
BURGHARTZ, JN
机构：
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 04期
关键词：
14;
D O I：
10.1109/55.61782
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication of silicon heterojunction bipolar transistors which have a record unity-current-gain cutoff frequency (fT) of 75 GHz for a collector-base bias of 1 V, an intrinsic base sheet resistance (Rbi) of 17 kΩ/∧, and an emitter width of 0.9 µm. This performance level, which represents almost a factor of 2 increase in the speed of a Si bipolar transistor, was achieved in a poly-emitter bipolar process by using SiGe for the base material. The germanium was graded in the 45-nm base to create a drift field of approximately 20 kV/cm, resulting in an intrinsic transit time of only 1.9 ps. © 1990 IEEE
引用
收藏
页码：171 / 173
页数：3
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