SIGE-BASE BIPOLAR-TRANSISTORS FOR CRYOGENIC BICMOS APPLICATIONS

被引：3
|
作者：
CRESSLER, JD
机构：
[1] Alabama Microelectronic Science and Technology Center, Electrical Engineering Department, Auburn University, Auburn, AL 36849
[2] Formally with: IBM Research Division, Yorktown Heights, NY 10598
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90556-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate that the cryogenic (e.g., 77K=LNT) properties of SiGe-base heterojunction bipolar transistors and circuits are sufficiently advanced to warrant a serious consideration of the merits of cryogenic BiCMOS technologies for future LNT computer applications. In this paper we review the features of epitaxial SiGe-base bipolar technologies which make them particularly suitable for LNT operation, examine the DC and dynamic properties of SiGe-base transistors operating at low temperatures, highlight the profile design constraints unique to the LNT environment, and discuss future research directions and opportunities.
引用
收藏
页码：841 / 848
页数：8
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