Electron Mobility and Persistent Photoconductivity in Quantum Wells In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate

被引：0
|
作者：
Kulbachinskii, Vladimir A. [1 ]
Lunin, Roman A. [1 ]
Yuzeeva, Natalia A. [1 ]
Galiev, Galib B. [1 ]
Vasilievskii, Ivan S. [1 ]
Klimov, Eugene A. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Low Temp Phys & Superconduct Dept, Moscow, Russia
来源：
ADVANCES IN NANODEVICES AND NANOFABRICATION | 2012年
关键词：
SCATTERING; HEMTS;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structures on InP substrate were grown by molecular beam epitaxy ( MBE). We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well In0.53Ga0.47As or by illumination using light with lambda = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used Shubnikovde Haas (SdH) effect to analyze subband electron concentration and mobility.
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页码：273 / 282
页数：10
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