Electron Mobility and Persistent Photoconductivity in Quantum Wells In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate

被引：0
|
作者：
Kulbachinskii, Vladimir A. [1 ]
Lunin, Roman A. [1 ]
Yuzeeva, Natalia A. [1 ]
Galiev, Galib B. [1 ]
Vasilievskii, Ivan S. [1 ]
Klimov, Eugene A. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Low Temp Phys & Superconduct Dept, Moscow, Russia
来源：
ADVANCES IN NANODEVICES AND NANOFABRICATION | 2012年
关键词：
SCATTERING; HEMTS;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structures on InP substrate were grown by molecular beam epitaxy ( MBE). We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well In0.53Ga0.47As or by illumination using light with lambda = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used Shubnikovde Haas (SdH) effect to analyze subband electron concentration and mobility.
引用
收藏
页码：273 / 282
页数：10
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