ON-CHIP STACKED PUNCHTHROUGH DIODE DESIGN FOR 900V POWER MOSFET GATE ESD PROTECTION

被引：0

作者：

Kim, Seong Bin ^{[1
]}

Geum, Jongmin ^{[1
]}

Kyoung, Sinsu ^{[1
]}

Sung, Man Young ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

ZENER DIODE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900V power MOSFET gate ESD protection is optimized.

引用

页数：3

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