Self-triggered stacked silicon-controlled rectifier structure (STSSCR) for on-chip electrostatic discharge (ESD) protection

被引：7

作者：

Liu Jizhi ^{[1
]}

Qian Lingli ^{[1
]}

Tian Rui ^{[1
]}

Liu Zhiwei ^{[1
]}

Zhao Liu ^{[1
]}

Cheng Hui ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2017年 / 71卷

关键词：

Electrostatic discharge (ESD) protection; Stacked silicon-controlled rectifier (SSCR); Holding voltage; SCR;

D O I：

10.1016/j.microrel.2016.11.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to improve the holding voltage and keep the trigger voltage of the silicon controlled rectifier (SCR) devices, a new self-triggered stacked SCR structure (STSSCR) is proposed for on-chip electrostatic discharge (ESD) protection. The STSSCR structure consists of a modified lateral SCR (MLSCR) and multiple double trigger SCRs (DTSCRs). The trigger voltage of the structure is decided by the trigger voltage of the MLSCR. And the holding voltage is decided by the holding voltage of the SCRs and the number of the DTSCR in the STSSCR structure. The simulation and experimental results show that STSSCR has a stable trigger voltage, a small trigger current and an adjustable high holding voltage. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：1 / 5

页数：5

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