Compact modelling for quantum confinement for InGaAs nanowire gate all around MOSFET

被引：2

作者：

Abdelmoneam, A. ^{[1
]}

Iniguez, B. ^{[2
]}

机构：

[1] Arab Acad Sci & Technol, Nanotechnol Engn Dept, Cairo, Egypt

[2] URV, Dept Elect Elect Engn & Automat, Tarragona, Spain

来源：

ELECTRONICS LETTERS | 2018年 / 54卷 / 23期

关键词：

Poisson equation; semiconductor device models; III-V semiconductors; Bessel functions; nanowires; wave functions; effective mass; gallium arsenide; Schrodinger equation; MOSFET; wave function; gate oxide; effective mass discontinuity; semiconductor-oxide interface; sub-band energies; cylindrical coordinates; quantum confinement; compact equation; nanowire gate; self-consistent Schrodinger-Poisson solver data; III-V gate all around nanowire MOSFET; InGaAs;

D O I：

10.1049/el.2018.5075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this Letter, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. The authors use an approximation for Bessel functions with the introduction of one fitting parameter. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.

引用

页码：1348 / 1349

页数：2

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