INVESTIGATION ON CYLINDRICAL GATE ALL AROUND (GAA) TO NANOWIRE MOSFET FOR CIRCUIT APPLICATION

Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling. In this work, the sensitivity of process parameters like channel length (L-g), channel thickness (t(Si)), and gate work function (phi(M)) on various performance metrics of undoped single material (S-M) and double material (M-D) cylindrical GAA (CGAA) to nanowire MOSFET are systematically analyzed. The electrical characteristics such as on current (I-on), subthreshold leakage current (I-off), the threshold voltage (V-th) and transconductance (g(m)) are evaluated and studied with the variation of device design parameters. The discussion gives the direction towards low standby operating power (LSTP) devices as improvement in I-off is approaching 90% in nanowire MOSFETs. All the device performances of undoped SM and DM CGAA MOSFETs are investigated through Sentaurus device simulator from Synopsys Inc.