Silicon Hard-Stop Spacers for 3D Integration of Superconducting Qubits

被引:8
|
作者
Niedzielski, Bethany M. [1 ]
Kim, David K. [1 ]
Schwartz, Mollie E. [1 ]
Rosenberg, Danna [1 ]
Calusine, Greg [1 ]
Das, Rabi [1 ]
Melville, Alexander J. [1 ]
Plant, Jason [1 ]
Racz, Livia [1 ]
Yoder, Jonilyn L. [1 ]
Ruth-Yost, Donna [1 ]
Oliver, William D. [1 ,2 ]
机构
[1] MIT, Lincoln Lab, 244 Wood St, Lexington, MA 02420 USA
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
关键词
superconducting qubits; 3D integration; bump-bonded planarity;
D O I
10.1109/iedm19573.2019.8993515
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As designs for superconducting qubits become more complex, 3D integration of two or more vertically bonded chips will become necessary to enable increased density and connectivity. Precise control of the spacing between these chips is required for accurate prediction of circuit performance. In this paper, we demonstrate an improvement in the planarity of bonded superconducting qubit chips while retaining device performance by utilizing hard-stop silicon spacer posts. These silicon spacers are defined by etching several microns into a silicon substrate and are compatible with 3D -integrated qubit fabrication. This includes fabrication of Josephson junctions, superconducting air-bridge crossovers, underbump metallization and indium bumps. To qualify the integrated process, we demonstrate high-quality factor resonators on the etched surface and measure qubit coherence (T-1, T-2,T-echo > 40 mu s) in the presence of silicon posts as near as 350 lam to the qubit.
引用
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页数:4
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