Improvement of Reliability Characteristics of TiO2-Based Resistive Switching Memory Device with an Inserted ZnO Layer

被引：4

作者：

Liu, Lifeng ^{[1
]}

Yu, Di ^{[1
]}

Chen, Bing ^{[1
]}

Zhang, Feifei ^{[1
]}

Gao, Bin ^{[1
]}

Li, Boyang ^{[1
]}

Han, Dedong ^{[1
]}

Kang, Jinfeng ^{[1
]}

Zhang, Xing ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期

关键词：

OXIDE;

D O I：

10.1143/JJAP.51.101101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiO2-based resistive switching memory devices with an inserted ZnO layer were fabricated, and the effect of inserting a ZnO layer between the TiO2 and bottom electrode on the reliability characteristics of TiO2-based memory devices was investigated. The improved endurance and retention performances were achieved in the TiO2-based memory device fabricated with an inserted ZnO layer. The mechanism of reliability improvement was discussed. The inserted ZnO layer is proposed to adjust the distribution of oxygen vacancies across the TiO2 layer due to the lower formation energy of oxygen vacancy in ZnO, which may be responsible for the improved reliability characteristics in the TiO2-based memory device with an inserted ZnO layer. (C) 2012 The Japan Society of Applied Physics

引用

下载

页数：4

共 50 条

[1] Switching characteristics in TiO2/ZnO double layer resistive switching memory device
Jain, Praveen K.
Salim, Mohammad
Chand, Umesh
Periasamy, C.
MATERIALS RESEARCH EXPRESS, 2017, 4 (06):
[2] Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
Liu, Li-Feng
Kang, Jin-Feng
Xu, Nuo
Sun, Xiao
Chen, Chen
Sun, Bing
Wang, Yi
Liu, Xiao-Yan
Zhang, Xing
Han, Ru-Qi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2701 - 2703
[3] Atomic Level Simulation of TiO2-Based Resistive Switching Memory
Gu, Xixi
Gao, Haixia
Yang, Mei
Guo, Jiangzhou
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 1224 - 1226
[4] Improvement of switching uniformity in TiO2-based resistive random access memory with graphene oxide embedded film
Jia W.
Hu L.
Gao W.
Mu W.
Chou Z.
Cheng X.
Materials Science in Semiconductor Processing, 2024, 182
[5] Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory
Zeng, Baiwen
Xu, Dinglin
Tang, Minghua
Xiao, Yongguang
Zhou, Yuzhou
Xiong, Rongxin
Li, Zheng
Zhou, Yichun
JOURNAL OF APPLIED PHYSICS, 2014, 116 (12)
[6] Improvement of resistive switching uniformity for TiO2-based memristive devices by introducing a thin HfO2 layer
Jiang, Hao
Xia, Qiangfei
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (06):
[7] TRIVALENT ION-DOPING EFFECT IN TiO2-BASED RESISTIVE SWITCHING MEMORY
Zeng, Baiwen
Xu, Dinglin
Zhou, Yuzhou
Tang, Minghua
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[8] La Ion-Doping Effect In TiO2-Based Resistive Switching Memory
Zhou, Yuzhou
Li, Gang
Yan, Shaoan
Tang, Minghua
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
[9] Uniform resistive switching properties of fully transparent TiO2-based memory devices
Zou, Lilan
Hu, Wei
Xie, Wei
Bao, Dinghua
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 693 : 1180 - 1184
[10] Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory by Inserting Nanoporous Layer
Zhao, Xiaoning
Wang, Zhongqiang
Xu, Haiyang
Xie, Yu
Ma, Hanlu
Ma, Jiangang
Liu, Yichun
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (11) : 1430 - 1433

← 1 2 3 4 5 →