La Ion-Doping Effect In TiO2-Based Resistive Switching Memory

被引：0
|
作者：
Zhou, Yuzhou [1 ]
Li, Gang [1 ]
Yan, Shaoan [1 ]
Tang, Minghua [1 ]
机构：
[1] Xiangtan Univ, Hunan Prov Key Lab Thin Film Mat & Devices, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
来源：
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年
关键词：
La-doped TiO2 film; bandgap; the oxygen vacancy;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Trivalent metal ions (La) were doped into a solution-synthesized TiO2 film, and the corresponding resistive switching characteristics were investigated in relation to the oxygen vacancies and chemical composition. The dopants' effects on both electronic structures and vacancy-formation stability of conductive filament structures are discussed.
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页数：2
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