Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices

被引：30

作者：

Liu, Li-Feng ^{[1
]}

Kang, Jin-Feng ^{[1
]}

Xu, Nuo ^{[1
]}

Sun, Xiao ^{[1
]}

Chen, Chen ^{[1
]}

Sun, Bing ^{[1
]}

Wang, Yi ^{[1
]}

Liu, Xiao-Yan ^{[1
]}

Zhang, Xing ^{[1
]}

Han, Ru-Qi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

resistive memory; TiO2; Gd doping;

D O I：

10.1143/JJAP.47.2701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Binary nietal-oxide-based resistive memory devices generally show broad dispersions of resistive switching parameters with continuous resistive switching, and this leads to severe readout and control hazards. In this paper, we report improvements of the resistive switching characteristics in TiO2-based resistive memory devices induced by the Gd doping of TiO2 films. The effect of Gd doping on the resistive switching of TiO2-based resistive memory devices is discussed.

引用

页码：2701 / 2703

页数：3

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