Atomic Level Simulation of TiO2-Based Resistive Switching Memory

被引：0
|
作者：
Gu, Xixi [1 ]
Gao, Haixia [1 ]
Yang, Mei [2 ]
Guo, Jiangzhou [1 ]
机构：
[1] Xidian Univ, Dept Microelect, Xian 710071, Shaanxi, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China
来源：
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年
基金：
中国国家自然科学基金;
关键词：
Conical shape; oxygen vacancy concentration; conductive filament; COMSOL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, an atomistic-level simulation model of bipolar TiO2 RRAM is addressed, which adopts the typical MIM structure and combines the equation of oxygen vacancy transport, current continuity and Joule heating. Based on the model, the dynamic formation and rupture of conductive filament are described in a 3D geometry model of COMSOL. Besides, the electro-thermal model with a conical shape conductive filament achieved is carried out to actually reflect the dynamic resistive switching processes and increase the understanding of conductive mechanism.
引用
收藏
页码：1224 / 1226
页数：3
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