Improvement of switching uniformity in TiO2-based resistive random access memory with graphene oxide embedded film

被引：0
|
作者：
Jia, Weijie [1 ]
Hu, Lifang [1 ]
Gao, Wei [1 ]
Mu, Wenjin [1 ]
Chou, Zhao [1 ]
Cheng, Xiao [1 ]
机构：
[1] College of Materials Science and Engineering, Taiyuan University of Technology, Shanxi, Taiyuan,030024, China
来源：
Materials Science in Semiconductor Processing | 2024年 / 182卷
关键词：
50;
D O I：
10.1016/j.mssp.2024.108688
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学科分类号：
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