Improvement of resistive switching performances via an amorphous ZrO2 layer formation in TiO2-based forming-free resistive random access memory

被引：43
|
作者：
Zeng, Baiwen [1 ]
Xu, Dinglin [1 ]
Tang, Minghua [1 ]
Xiao, Yongguang [1 ]
Zhou, Yuzhou [1 ]
Xiong, Rongxin [1 ]
Li, Zheng [1 ]
Zhou, Yichun [1 ]
机构：
[1] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 12期
基金：
中国国家自然科学基金;
关键词：
FILMS;
D O I：
10.1063/1.4896402
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the effects of an amorphous ZrO2 layer on the TiO2-based bipolar resistive switching memory device where the ZrO2 layer plays an important role as a supplementary reservoir of oxygen vacancies. Compared with Pt/TiO2/Pt monolayer device, a remarkably improved uniformity of switching parameters such as switching voltages and resistances in high/low states is demonstrated in the Pt/ZrO2/TiO2/Pt system. The resistive switching mechanism of memory devices incorporating the ZrO2/TiO2 bilayer structure can be attributed to multiple conducting filaments through the occurrence of redox reactions at the ZrO2/TiO2 surface. (C) 2014 AIP Publishing LLC.
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页数：4
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