Resistive Switching in Amorphous GeSe-Based Resistive Random Access Memory

Resistive random access memories (ReRAMs) based on chalcogenide materials have only been studied using oxidizable metals such as Ag or Cu. However, in this study, the non-volatile memory-switching characteristics have been investigated for an Al/GeSe/Pt structural ReRAM device, which does not use an active metal electrode. A switching mechanism was applied to the oxygen vacancy model, which is used in the oxide thin-film-based ReRAM. The component ratio and the amorphous state of GeSe thin films were confirmed through Auger electron spectroscopy and X-ray diffraction analysis. As a result, a high on/off resistance ratio of approximately 105, long-term reliability, and good endurance characteristics were achieved with the proposed Al/GeSe/Pt ReRAM that uses inert electrodes.