Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

被引：180

作者：

Seo, Jung Won ^{[1
]}

Park, Jae-Woo ^{[1
]}

Lim, Keong Su ^{[1
]}

Yang, Ji-Hwan ^{[1
]}

Kang, Sang Jung ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

capacitors; indium compounds; random-access storage; semiconductor storage; switching; zinc compounds;

D O I：

10.1063/1.3041643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This report covers the fabrication of a fully transparent resistive random access memory (TRRAM) device based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81% (including the substrate) in the visible region and an excellent switching behavior under 3 V. The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10 years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices.

引用

页数：3

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