Resistive random access memory and its applications in storage and nonvolatile logic

被引：0
|
作者：
Dongbin Zhu [1 ]
Yi Li [1 ]
Wensheng Shen [1 ]
Zheng Zhou [1 ]
Lifeng Liu [1 ]
Xing Zhang [1 ]
机构：
[1] Institute of Microelectronics, Peking University
来源：
Journal of Semiconductors | 2017年 / 07期
基金：
中国国家自然科学基金;
关键词：
RRAM; memory; nonvolatile logic; metal–oxide; resistive switching;
D O I：
暂无
中图分类号：
TP333 [存贮器];
学科分类号：
081201 ;
摘要：
The resistive random access memory(RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.
引用
收藏
页码：22 / 34
页数：13
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