Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

被引：46

作者：

Shih, Chih-Cheng ^{[1
]}

Chang, Kuan-Chang ^{[1
]}

Chang, Ting-Chang ^{[2
]}

Tsai, Tsung-Ming ^{[1
]}

Zhang, Rui ^{[3
]}

Chen, Jung-Hui ^{[4
]}

Chen, Kai-Huang ^{[5
]}

Young, Tai-Fa ^{[6
]}

Chen, Hsin-Lu ^{[6
]}

Lou, Jen-Chung ^{[3
]}

Chu, Tian-Jian ^{[1
]}

Huang, Syuan-Yong ^{[1
]}

Bao, Ding-Hua ^{[7
]}

Sze, Simon M. ^{[2
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China

[4] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 800, Taiwan

[5] Tung Fang Design Univ, Dept Elect Engn & Comp Sci, Kaohsiung 829, Taiwan

[6] Dept Mech & Electromech Engn, Kaohsiung 804, Taiwan

[7] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 06期

关键词：

ZnO; RRAM; ultra-violet light; current conduction mechanism; IMPROVEMENT;

D O I：

10.1109/LED.2014.2316673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxygen manipulation by UV light irradiation. To clarify the switching mechanism, conduction current fitting was applied and meanwhile a reaction model was proposed to explain the origin of drastic current variation. UV light-assisted oxygen manipulation in ZnO RRAM is an efficient method to modify device switching behavior, and this investigation also unveils the interesting phenomenon of transparent electrode RRAM under UV light illumination condition.

引用

页码：633 / 635

页数：3

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