Amorphous ZnO based resistive random access memory

被引：110
|
作者：
Huang, Yong [1 ,2 ]
Shen, Zihan [1 ,3 ]
Wu, Ye [1 ]
Wang, Xiaoqiu [2 ]
Zhang, Shufang [1 ]
Shi, Xiaoqin [1 ]
Zeng, Haibo [1 ]
机构：
[1] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Inst Optoelect & Nanomat, Nanjing 210094, Jiangsu, Peoples R China
[2] Jinling Inst Technol, Dept Fundamental Courses, Nanjing 211169, Jiangsu, Peoples R China
[3] Nanjing Univ Sci & Technol, Coll Elite Educ, Nanjing 210094, Jiangsu, Peoples R China
来源：
RSC ADVANCES | 2016年 / 6卷 / 22期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
EMISSION;
D O I：
10.1039/c5ra22728c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated. The Ag/a-ZnO/Pt RRAMs exhibit typical bipolar resistive switching features with the resistance ratio of high to low resistance states (HRS/LRS) more than 10(7). Detailed current-voltage I-V characteristic analysis suggests that the conduction mechanism in the low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in the high resistance state which results from the Schottky contacts between the metal electrodes and ZnO. The Ag/a-ZnO/Pt devices also show excellent retention performance. These results suggest promising application potentials for Ag/a-ZnO/Pt RRAMs.
引用
收藏
页码：17867 / 17872
页数：6
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