A Study on Analyzing and Modeling Dynamic Random Access Memory Power Under Burn-in Test Condition

被引：0

作者：

Han, C. K. ^{[1
]}

Yoon, I. K. ^{[1
]}

Lim, H. S. ^{[1
]}

Kang, S. M. ^{[1
]}

Kim, J. J. ^{[1
]}

Ru, J. W. ^{[1
]}

Hwang, H. S. ^{[1
]}

Rhee, S. J. ^{[1
]}

Cho, K. Y. ^{[1
]}

Jin, G. Y. ^{[2
]}

机构：

[1] Samsung Elect Co Ltd, DRAM Prod Engn Team, Memory Business, Suwon, South Korea

[2] Samsung Elect Co Ltd, DRAM Prod & Technol, Memory Business, Suwon, South Korea

来源：

2016 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL ENGINEERING AND ENGINEERING MANAGEMENT (IEEM) | 2016年

关键词：

Power; Burn-in;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During burn-in of DRAM (Dynamic Random Access Memory), power consumption has become a significant consideration on the capabilities of test environment with the growing quantity. Under burn-in test condition, each electrical current is categorized as operational characteristics. In this paper, we first present quantitative power consumption and its formulas under burn-in condition. Each current is categorized as operational characteristics, and components of power consumption are extracted by simultaneous equations with experimental results. Power reduction schemes show the possibility of power down without loss of Burn-in effectiveness.

引用

页码：1674 / 1676

页数：3

共 38 条

[21] Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study
Puglisi, Francesco M.
Larcher, Luca
Padovani, Andrea
Pavan, Paolo
[J]. MRS ADVANCES, 2016, 1 (05): : 327 - 338
[22] Measurement of Static Random Access Memory Power-Up State Using an Addressable Cell Array Test Structure
Takeuchi, Kiyoshi
Mizutani, Tomoko
Shinohara, Hirofumi
Saraya, Takuya
Kobayashi, Masaharu
Hiramoto, Toshiro
[J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2017, 30 (03) : 209 - 215
[23] Analyzing the Performance of a Low Power, High Performance Latch-Based Static Random-Access Memory Sense Amplifier for Epilepsy Detection
Kumar, S. Dinesh
Viswanathan, N.
[J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2024, 19 (07) : 759 - 767
[24] The analysis of competitive factors of integrated circuit industry in Taiwan - A case study of DRAM (Dynamic Random Access Memory)
Yuan, BJC
Yuen, WY
[J]. THIRTIETH HAWAII INTERNATIONAL CONFERENCE ON SYSTEM SCIENCES, VOL 3: INFORMATION SYSTEMS TRACK - ORGANIZATIONAL SYSTEMS AND TECHNOLOGY, 1997, : 505 - 517
[25] Design and Analysis of Robust and Wide Operating Low-Power Level-Shifter for Embedded Dynamic Random Access Memory
Ramclam, Kenneth
Ghosh, Swaroop
[J]. GLSVLSI'14: PROCEEDINGS OF THE 2014 GREAT LAKES SYMPOSIUM ON VLSI, 2014, : 123 - 128
[26] Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck
Lee, Chung-Yuan
Lai, Chao-Sung
Yang, Chia-Ming
Wang, David H. L.
Lin, Betty
Lee, Siimon
Huang, Chi-Hung
Wei, Chen Chang
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (08)
[27] DESIGN AND DEVELOP LOW-POWER MEMORY CONTROLLER FOR GAIN CELL–EMBEDDED DYNAMIC RANDOM-ACCESS MEMORY CELL USING INTELLIGENT CLOCK GATING
Department of Electronics and Communication Engineering, University College of Engineering, Osmania University, Hyderabad
500007, India
不详
500034, India
[J]. Telecommun Radio Eng, 8 (83-94):
[28] Dynamic Modeling and Control of Power-Split HEV with Multi-phase Electric Machines under Fault Condition
Grossi, Federica
Fei, Marco
Zanasi, Roberto
[J]. 2013 EUROPEAN CONTROL CONFERENCE (ECC), 2013, : 2975 - 2981
[29] A COMPUTATIONAL STUDY ON THE MECHANICAL POWER LOSS OF A SPUR GEAR PAIR UNDER THE THERMAL TRIBO-DYNAMIC CONDITION
Li, Sheng
[J]. INTERNATIONAL DESIGN ENGINEERING TECHNICAL CONFERENCES AND COMPUTERS AND INFORMATION IN ENGINEERING CONFERENCE, 2015, VOL 10, 2016,
[30] APPLICABILITY TEST FOR SYNCHROTRON-RADIATION X-RAY-LITHOGRAPHY IN 64-MB DYNAMIC RANDOM-ACCESS MEMORY FABRICATION PROCESSES
FUJII, K
YOSHIHARA, T
TANAKA, Y
SUZUKI, K
NAKAJIMA, T
MIYATAKE, T
ORITA, E
ITO, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3949 - 3953

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