APPLICABILITY TEST FOR SYNCHROTRON-RADIATION X-RAY-LITHOGRAPHY IN 64-MB DYNAMIC RANDOM-ACCESS MEMORY FABRICATION PROCESSES

被引：12
|
作者：
FUJII, K
YOSHIHARA, T
TANAKA, Y
SUZUKI, K
NAKAJIMA, T
MIYATAKE, T
ORITA, E
ITO, K
机构：
[1] NEC CORP LTD,DIV LSI MFG,SAGAMIHARA,KANAGAWA 229,JAPAN
[2] SUMITOMO HEAVY IND LTD,QUANTUM EQUIPMENT TECHNOL LAB,TANASHI,TOKYO 188,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期
关键词：
D O I：
10.1116/1.587580
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：3949 / 3953
页数：5
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