A Study on Analyzing and Modeling Dynamic Random Access Memory Power Under Burn-in Test Condition

被引：0

作者：

Han, C. K. ^{[1
]}

Yoon, I. K. ^{[1
]}

Lim, H. S. ^{[1
]}

Kang, S. M. ^{[1
]}

Kim, J. J. ^{[1
]}

Ru, J. W. ^{[1
]}

Hwang, H. S. ^{[1
]}

Rhee, S. J. ^{[1
]}

Cho, K. Y. ^{[1
]}

Jin, G. Y. ^{[2
]}

机构：

[1] Samsung Elect Co Ltd, DRAM Prod Engn Team, Memory Business, Suwon, South Korea

[2] Samsung Elect Co Ltd, DRAM Prod & Technol, Memory Business, Suwon, South Korea

来源：

2016 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL ENGINEERING AND ENGINEERING MANAGEMENT (IEEM) | 2016年

关键词：

Power; Burn-in;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During burn-in of DRAM (Dynamic Random Access Memory), power consumption has become a significant consideration on the capabilities of test environment with the growing quantity. Under burn-in test condition, each electrical current is categorized as operational characteristics. In this paper, we first present quantitative power consumption and its formulas under burn-in condition. Each current is categorized as operational characteristics, and components of power consumption are extracted by simultaneous equations with experimental results. Power reduction schemes show the possibility of power down without loss of Burn-in effectiveness.

引用

页码：1674 / 1676

页数：3

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