A CMOS transconductor with 80-dB SFDR up to 10 MHz

被引：44

作者：

Chilakapati, U

Fiez, TS

Eshraghi, A

机构：

[1] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99164 USA

[2] Oregon State Univ, Corvallis, OR 97331 USA

[3] IBM Microelect, Lowell, MA 01851 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/4.987089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS transconductor uses resistors at the input and an OTA in unity-gain feedback to achieve 80-dB spurious-free dynamic range (SFDR) for 3.6-V-pp differential inputs up to 10 MHz. The combination of resistors at the input and negative feedback around the operational transconductance amplifier (OTA) allows this transconductor to accommodate a differential input swing of 4 V with a 3.3-V supply. The total harmonic distortion (THD) of the transconductor is -77 dB at 10 MHz for a 3.6-V-pp differential input and third-order intermodulation spurs measure less than -79 dBc for 1.8-V-pp differential inputs at 1 MHz. The transconductance core dissipates 10.56 mW from a 3.3-V supply and occupies 0.4 mm(2) in a 0.35-mum CMOS process.

引用

页码：365 / 370

页数：6

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