150 μA CMOS transconductor with 82 dB SFDR

被引：0

作者：

Pennisi, Salvatore ^{[1
]}

Scotti, Giuseppe ^{[2
]}

Trifiletti, Alessandro ^{[2
]}

机构：

[1] Univ Catania, Dipartimento Ingn Elettr Elettron & Sistemi, Viale A Doria 6, I-95125 Catania, Italy

[2] Univ Roma La Sapienza, DIE, Rome, Italy

来源：

2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11 | 2007年

关键词：

D O I：

10.1109/ISCAS.2007.378320

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A CMOS high-linearity transconductor useful for IC filtering applications is presented. It is based on a feedback unity-gain amplifier driving a resistor to achieve linear voltage-to-current conversion. Simulation results are provided on a design example using a 0.35-mu m technology, powered from a 3.3V supply, and using a total dc current of 150 mu A. The 3-dB bandwidth was 630 MHz and HD3, onto a load resistor of 20k Omega, was -82 dB at 1MHz.

引用

页码：237 / +

页数：2

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