SOTB (Silicon on Thin Buried Oxide): More than Moore technology for IoT and Automotive

被引：0

作者：

Hasegawa, Takumi ^{[1
]}

Yamamoto, Yoshiki ^{[1
]}

Makiyama, Hideki ^{[1
]}

Shinkawata, Hiroki ^{[1
]}

Kamohara, Shiro ^{[1
]}

Yamaguchi, Yasuo ^{[1
]}

机构：

[1] Renesas Elect Corp, Tokyo 1878588, Japan

来源：

2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) | 2017年

关键词：

SOTB; CMOS; MCU; Ultra low power; IoT; Automotive;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Ultra low power performance is indispensable for Micro Controller Unit (MCU) used as wireless sensor and communication nodes which needs battery maintenance free and energy harvesting operation in the Internet of things (IoT) era. The Silicon on Thin Buried Oxide (SOTB) is one of the most suitable CMOS technology for ultra low power MCU because of its small variability and back bias controllability. This paper describes the mechanism of ultra low power performance of SOTB, performance demonstration of transistor, SRAM and MCU test chip, and what SOTB will realize for IoT and Automotive. SOTB will have less than 1/10 of power efficiency by low leakage current at standby mode and low current consumption at operation mode which today's technology cannot realize.

引用

页数：4

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