Vmin=0.4 V LSIs are the real with Silicon-on-Thin-Buried-Oxide (SOTB) - How is the application with "Perpetuum-Mobile" micro-controller with SOTB?

被引：0

作者：

Sugii, N. ^{[1
]}

Iwamatsu, T. ^{[1
]}

Yamamoto, Y. ^{[1
]}

Makiyama, H. ^{[1
]}

Shinohara, H. ^{[1
]}

Oda, H. ^{[1
]}

Kamohara, S. ^{[1
]}

Yamaguchi, Y. ^{[1
]}

Ishibashi, K. ^{[2
]}

Mizutani, T. ^{[3
]}

Hiramoto, T. ^{[3
]}

机构：

[1] LEAP, Tsukuba, Ibaraki 3058569, Japan

[2] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near-or sub-Vth operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ultra-low-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The "Perpetuum-Mobile" micro-controllers operating at similar to 0.4 V are expected to be implemented in many applications such as the internet of things.

引用

页数：2