THIN BURIED OXIDE IN IMPLANTED SILICON

被引：9
|
作者：
MEDA, L
BERTONI, S
CEROFOLINI, GF
SPAGGIARI, C
机构：
[1] IGD-EnlChem, 28100 Novara, NO
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷
关键词：
D O I：
10.1016/0168-583X(93)90688-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon-on-insulator (SOI) is a candidate substrate for future microelectronic devices. At present, the most reliable technology to obtain SOI is oxygen ion implantation (SIMOX); however, due to the implantation time, the material cost is high. A low dose SIMOX, with a thin (50-100 nm) buried layer, can decrease the present cost. The key to obtain low dose SIMOX is the control of oxide precipitation which takes place during ion implantation. A model is formulated to predict distribution and size of oxide precipitates formed during the implantation, and the feasibility of a very thin buried layer, at different depths, is demonstrated.
引用
收藏
页码：813 / 817
页数：5
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