Si-doped and undoped Ga1-xInxSb grown by molecular-beam epitaxy on GaAs substrates

Growth by molecular-beam epitaxy and characterization of Si-doped and unintentionally doped Ga1-xInxSb layers in the full compositional range on GaAs substrates are reported. The grown samples were characterized by reflection high-energy electron diffraction, x-ray diffraction, Hall-effect measurements, and secondary-ion-mass spectroscopy. The unintentionally doped layers had carrier concentrations below 6 x 10(16) cm(-3) with a maximum at x approximate to 0.5, where the conduction switched from p to n type. Silicon doping in the 10(17) cm(-3) range provided accepters up to x approximate to 0.85 for a growth temperature of 430 degrees C. For higher x values conduction was mixed and the Hall-effect data suggest that an inversion layer of electrons could be present on the surface. (C) 1996 American Institute of Physics.