EFFECT OF HYDROGEN ON UNDOPED AND LIGHTLY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

被引：24
|
作者：
PAO, YC [1 ]
LIU, D [1 ]
LEE, WS [1 ]
HARRIS, JS [1 ]
机构：
[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期
关键词：
D O I：
10.1063/1.96956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1291 / 1293
页数：3
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