EFFECT OF HYDROGEN ON UNDOPED AND LIGHTLY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS

被引：24
|
作者：
PAO, YC [1 ]
LIU, D [1 ]
LEE, WS [1 ]
HARRIS, JS [1 ]
机构：
[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期
关键词：
D O I：
10.1063/1.96956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1291 / 1293
页数：3
相关论文
共 50 条
  • [21] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KORDOS, P
    FORSTER, A
    BETKO, J
    MORVIC, M
    NOVAK, J
    APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
  • [22] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HEAVILY ACCEPTOR DOPED GAAS-LAYERS FOR GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    HOKE, WE
    LEMONIAS, PJ
    WEIR, DG
    BRIERLEY, SK
    HENDRIKS, HT
    ADLERSTEIN, MG
    ZAITLIN, MP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 856 - 858
  • [23] CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS
    BAFLEUR, M
    MUNOZYAGUE, A
    THIN SOLID FILMS, 1983, 101 (04) : 299 - 310
  • [24] COMPENSATION EFFECTS IN SI-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    NOTTENBURG, R
    BUHLMANN, HJ
    FREI, M
    ILEGEMS, M
    APPLIED PHYSICS LETTERS, 1984, 44 (01) : 71 - 73
  • [25] DOPANT INCORPORATION AND ACTIVATION IN HIGHLY SI DOPED GAAS-LAYERS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY
    RAMSTEINER, M
    WAGNER, J
    SILVEIRA, JP
    BRIONES, F
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 85 - 90
  • [26] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS
    WOOD, CEC
    APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748
  • [27] THE PHOTOLUMINESCENCE SPECTRA OF THIN SI-DOPED GAAS-LAYERS GROWN BY MBE
    PASTRNAK, J
    OSWALD, J
    LAZNICKA, M
    BOSACCHI, A
    SALOKATVE, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1990, 118 (02): : 567 - 576
  • [28] SOME CHARACTERISTICS OF HEAVILY BE-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ZHANG, DH
    RADHAKRISHNAN, K
    YOON, SF
    LI, HM
    LEK, AW
    LAU, EH
    THIN SOLID FILMS, 1993, 235 (1-2) : 1 - 5
  • [29] ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS GROWN AT LOW-TEMPERATURE
    BETKO, J
    KORDOS, P
    KUKLOVSKY, S
    FORSTER, A
    GREGUSOVA, D
    LUTH, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 147 - 150
  • [30] BE-DOPED GAAS-LAYERS GROWN AT A HIGH AS/GA RATIO BY MOLECULAR-BEAM EPITAXY
    ZHANG, DH
    RADHAKRISHNAN, K
    YOON, SF
    LI, HM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1120 - 1123
12345