ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS GROWN AT LOW-TEMPERATURE

被引：14
|
作者：
BETKO, J
KORDOS, P
KUKLOVSKY, S
FORSTER, A
GREGUSOVA, D
LUTH, H
机构：
[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST THIN FILM TECHNOL, D-52425 JULICH, GERMANY
[2] SLOVAK ACAD SCI, INST ELECT ENGN, BRATISLAVA 84239, SLOVAKIA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期
关键词：
ELECTRICAL MEASUREMENTS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY;
D O I：
10.1016/0921-5107(94)90035-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical properties of low-temperature-grown (LTG) molecular beam epitaxial GaAs layers were investigated in the temperature range 300-440 K. The resistivity, Hall mobility and Hall concentration of LTG GaAs were evaluated by applying precise conductivity and Hall effect measurements. The sheet conductivity and Hall effect were measured on double-layer structures (i.e. LTG layer and substrate) and on a semi-insulating substrate. The properties of as-grown (250 degrees C) and annealed (310-590 degrees C) LTG GaAs are presented and discussed. It is shown that reasonable resistivity data can be obtained without separating the LTG layer from its substrate. On LTG GaAs annealed at 350 degrees C, the resistivity and Hall effect data exhibit a temperature-dependent character different from all other samples. This could be due to the compensation mechanism between deep-level states and shallow impurities.
引用
收藏
页码：147 / 150
页数：4
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