ELECTRICAL CHARACTERIZATION OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE

被引:0
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作者
LUO, JK
THOMAS, H
MORGAN, DV
WESTWOOD, D
WILLIAMS, RH
THERON, D
机构
[1] UNIV WALES COLL CARDIFF,DEPT PHYS & ASTRON,CARDIFF CF1 3YH,S GLAM,WALES
[2] UNIV LILLE,IEMN,LILLE,FRANCE
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中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The effects of growth and annealing temperatures on the electrical properties of the low temperature (LT-) grown GaAs have been investigated. It was found that the resistivity of the as-grown LT-GaAs layer increased, while the breakdown voltage decreased as the growth temperature was increased, approaching the value of the bulk GaAs. Thermal annealing causes an exponential increases of the resistivity with increasing annealing temperature T-A, giving an activation energy of E(A) similar to 2.1 eV. The transport in the LT-GaAs layers was found to be dominated by hopping conduction, and additionally by a thermally-activated process at high temperatures. The breakdown voltage V-BD, for as-grown LT-GaAs increased with decreasing measurement temperature; but decreased with decreasing temperature following annealing at T-A > 500 degrees C. The hopping conduction is held responsible for the observed electrical breakdown properties.
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页码:301 / 306
页数:6
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