THE PHOTOLUMINESCENCE SPECTRA OF THIN SI-DOPED GAAS-LAYERS GROWN BY MBE

被引：3
|
作者：
PASTRNAK, J
OSWALD, J
LAZNICKA, M
BOSACCHI, A
SALOKATVE, A
机构：
[1] TAMPERE UNIV, SF-33101 TAMPERE, FINLAND
[2] MASPEC, I-43100 PARMA, ITALY
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1990年 / 118卷 / 02期
关键词：
D O I：
10.1002/pssa.2211180230
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Free and bound excitons and (D, A) recombination related luminescence of selectively doped MBE grown GaAs structures, consisting of GaAs: Si layers sandwiched between undoped buffer and cap layers, are studied in dependence on the doped layer thickness. The observed changes in luminescence intensity are explained by a model assuming the dominant contribution of the Si‐doped layers of effective thickness exceeding several times their nominal thickness. The systematic shift in position of the (e, A) line with increasing thickness of the doped layer is explained by the shift of the Fermi energy due to the Si donors. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
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收藏
页码：567 / 576
页数：10
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