HIGH-QUALITY SI-DOPED GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：21
|
作者：
SHIMANOE, T
MUROTANI, T
NAKATANI, M
OTSUBO, M
MITSUI, S
机构：
来源：
SURFACE SCIENCE | 1979年 / 86卷 / JUL期
关键词：
D O I：
10.1016/0039-6028(79)90387-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：126 / 136
页数：11
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