Metal droplet formation and motion during the III-V semiconductor evaporation

被引：11

作者：

Spirina, A. A. ^{[1
]}

Shwartz, N. L. ^{[1
,2
]}

机构：

[1] AV Rzhanov Inst Semicond Phys SB RAS, Lavrentieva Aven 13, Novosibirsk 630090, Russia

[2] Novosibirsk State Tech Univ, Karl Marx Aven 20, Novosibirsk 630073, Russia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 100卷

基金：

俄罗斯基础研究基金会;

关键词：

Metal droplets; III-V; Langmuir evaporation; Simulation; Monte Carlo; MONTE-CARLO-SIMULATION; VAPOR-PRESSURES; GAAS; GALLIUM; MECHANISM; FACES;

D O I：

10.1016/j.mssp.2019.05.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The process of metal droplet formation and motion during a high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The nanosized droplet motion mechanism during a high-temperature annealing is suggested. The reason for the droplet motion is the lateral drop-crystal interface dissolution in a liquid metal. The movement direction is determined by the difference in the (111)A and (111)B crystal facet dissolution rates. The step movement deceleration near the droplet can be a cause of step bunching.

引用

页码：319 / 325

页数：7

共 50 条

[31] III-V semiconductor nanowire lasers
Mokkapati, Sudha
Saxena, Dhruv
Nian-Jiang
Gao, Qian
Tan, Hark Hoe
Jagadish, Chennupati
2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014), 2014, : 217 - 218
[32] MICROSCOPIC CAPACITORS AND NEUTRAL INTERFACES IN III-V/IV/III-V SEMICONDUCTOR HETEROSTRUCTURES
BIASIOL, G
SORBA, L
BRATINA, G
NICOLINI, R
FRANCIOSI, A
PERESSI, M
BARONI, S
RESTA, R
BALDERESCHI, A
PHYSICAL REVIEW LETTERS, 1992, 69 (08) : 1283 - 1286
[33] CHARACTERIZATION OF INTERFACE STATES AT III-V COMPOUND SEMICONDUCTOR-METAL INTERFACES
BURSTEIN, L
BREGMAN, J
SHAPIRA, Y
JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2312 - 2316
[34] III-V Complementary Metal-Oxide-Semiconductor Electronics on Silicon Substrates
Nah, Junghyo
Fang, Hui
Wang, Chuan
Takei, Kuniharu
Lee, Min Hyung
Plis, E.
Krishna, Sanjay
Javey, Ali
NANO LETTERS, 2012, 12 (07) : 3592 - 3595
[35] NEW ELECTRONIC-PROPERTIES OF METAL/III-V COMPOUND SEMICONDUCTOR INTERFACES
BRILLSON, LJ
VITURRO, RE
CHANG, S
SHAW, JL
MAILHIOT, C
ZANONI, R
HWU, Y
MARGARITONDO, G
KIRCHNER, P
WOODALL, JM
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 103 - 115
[36] OBSERVATIONS ON INTERACTIONS BETWEEN METAL-CLUSTERS AND III-V SEMICONDUCTOR SUBSTRATES
LOWES, TD
SCANNING MICROSCOPY, 1994, 8 (04) : 773 - 780
[37] Theoretical investigations on the formation of wurtzite segments in group III-V semiconductor nanowires
Yamashita, Tomoki
Sano, Kosuke
Akiyama, Toru
Nakamura, Kohji
Ito, Tomonori
APPLIED SURFACE SCIENCE, 2008, 254 (23) : 7668 - 7671
[38] Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures
Hasegawa, H
Sato, T
ELECTROCHIMICA ACTA, 2005, 50 (15) : 3015 - 3027
[39] Plasmonics for III-V semiconductor solar cells
Mokkapati, S.
Lu, H. F.
Turner, S.
Fu, L.
Tan, H. H.
Jagadish, C.
2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 56 - 57
[40] PHOTOELECTROCHEMICAL STUDIES OF III-V SEMICONDUCTOR JUNCTIONS
CARLSSON, P
HOLSTROM, B
UOSAKI, K
KITA, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C464 - C464

← 1 2 3 4 5 →