Metal droplet formation and motion during the III-V semiconductor evaporation

被引：11

作者：

Spirina, A. A. ^{[1
]}

Shwartz, N. L. ^{[1
,2
]}

机构：

[1] AV Rzhanov Inst Semicond Phys SB RAS, Lavrentieva Aven 13, Novosibirsk 630090, Russia

[2] Novosibirsk State Tech Univ, Karl Marx Aven 20, Novosibirsk 630073, Russia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 100卷

基金：

俄罗斯基础研究基金会;

关键词：

Metal droplets; III-V; Langmuir evaporation; Simulation; Monte Carlo; MONTE-CARLO-SIMULATION; VAPOR-PRESSURES; GAAS; GALLIUM; MECHANISM; FACES;

D O I：

10.1016/j.mssp.2019.05.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The process of metal droplet formation and motion during a high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The nanosized droplet motion mechanism during a high-temperature annealing is suggested. The reason for the droplet motion is the lateral drop-crystal interface dissolution in a liquid metal. The movement direction is determined by the difference in the (111)A and (111)B crystal facet dissolution rates. The step movement deceleration near the droplet can be a cause of step bunching.

引用

页码：319 / 325

页数：7

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